Reliability barrier integration for Cu application

ABSTRACT

Embodiments of the present invention provide a process sequence and related hardware for filling a patterned feature on a substrate with a metal, such as copper. The sequence comprises first forming a reliable barrier layer in the patterned feature to prevent diffusion of the metal into the dielectric layer through which the patterned feature is formed. One sequence comprises forming a generally conformal barrier layer over a patterned dielectric, etching the barrier layer at the bottom of the patterned feature, depositing a second barrier layer, and then filling the patterned feature with a metal, such as copper.

RELATED APPLICATIONS

[0001] This application is a continuation of pending U.S. patentapplication Ser. No. 10/052,681, filed Jan. 17, 2002, which is acontinuation-in-part of pending U.S. patent application Ser. No.08/856,116, filed May 14, 1997, and which is hereby incorporated byreference.

BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] Embodiments of the invention relate to a deposition sequence andrelated hardware for manufacturing a plug and line typical of a dualdamascene structure utilizing a thin conformal barrier layer formed onthe walls of the feature.

[0004] 2. Description of the Related Art

[0005] Modern semiconductor integrated circuits usually involve multipleconductive layers separated by dielectric (insulating) layers, such asoxide layers. The conductive layers are electrically interconnected byholes penetrating the intervening oxide layers and contacting someunderlying conductive feature. After the holes are etched, they arefilled with a metal, typically aluminum or copper, to electricallyconnect the conductive layers with each other. In a circuit formed by adual damascene process, there are two types of holes, vias and trenches,which penetrate dielectric layers of the circuit. Vias are holes whichextend to an underlying conductive feature. Vias which are filled with ametal are called plugs, or via plugs. Trenches are holes which extendinto the dielectric layer of the circuit, but do not extend to anunderlying conductive feature. Trenches which are filled with a metalare called lines, which serve as horizontal interconnects in a circuit.

[0006] As sizes of features such as holes in integrated circuitscontinue to decrease, the characteristics of the material forming theplugs become increasingly important. The smaller the plug, the lessresistive the material forming the plug should be for speed performance.Copper is a material which is becoming more important as a result.Copper has a resistivity of 1.7 μΩ-cm. Copper has a small RC timeconstant thereby increasing the speed of a device formed thereof. Inaddition, copper exhibits improved reliability over aluminum in thatcopper has excellent electromigration resistance and can drive morecurrent in the lines.

[0007] One problem with the use of copper is that copper diffuses intosilicon dioxide, silicon and other dielectric materials. Therefore,barrier layers become increasingly important to prevent copper fromdiffusing into the dielectric materials and compromising the integrityof the device. Barrier materials such as Ta, TaN, SiN, Ti, TiN, W, andWN on the interlayer dielectric will effectively inhibit interlayerdiffusion. However, within the same dielectric layer it is difficult toprovide an effective barrier to prevent leakage between lines. Severaltechnologies, such as physical vapor deposition (PVD), are presentlyunder investigation for adding a barrier layer to the via sidewallseparating the copper metal from the interlayer dielectric. However,common PVD technologies are limited in high aspect structures due to thedirectional nature of their deposition. Thus, the thickness of a barrierlayer deposited by PVD will depend directly upon the structurearchitecture, with the barrier becoming thinner on the sidewall near thestructure bottom. The barrier thickness, and therefore the barrierintegrity may be compromised on the sidewall near the structure bottom.Also, the bottom corners of vias often do not form precise right anglesat their intersection. Instead, there may be recesses or “undercuts” 11at the bottom corners of vias 10 formed in a dielectric layer 12, asshown in FIG. 1. As a result, it is difficult to deposit a barrier layerthat covers these undercuts by PVD because of the limited directionalityof deposition by PVD.

[0008] In contrast, chemical vapor deposition (CVD) and atomic layerdeposition (ALD) deposited films are, by their nature, conformal inre-entrant structures. Silicon nitride (Si_(x)N_(y)) and titaniumnitride (TiN) prepared by decomposition of an organic material,tetrakis(dimethylamido) titantium (TDMAT) are common semiconductormanufacturing materials which display the described conformalperformance. Both materials are perceived as being good barriers to Cudiffusion, but are considered unattractive due to their highresistivity. The highly resistive nature of these materialsdetrimentally affects the conductivity between the plug and theunderlying conductive features, which must be maintained as low aspossible to maximize logic device performance.

[0009] Therefore, there is a need for a process sequence and relatedhardware which provides a good barrier layer on the via sidewall, butwhich does not negatively affect the conductivity of the plug.

SUMMARY OF THE INVENTION

[0010] Embodiments of the present invention generally provide a processand related hardware for filling a patterned feature on a substrate withcopper or other conductive materials. One embodiment of the presentinvention comprises forming a generally conformal CVD or ALD barrierlayer over a patterned feature formed in a substrate, etching thebarrier layer at the bottom of the patterned feature, depositing asecond barrier layer that does not significantly impact conductivitybetween the plug and the underlying layer, but provides an adequatebarrier on other surfaces, and then filling the patterned feature with aconductive material, such as copper. Another embodiment of the presentinvention comprises forming a generally conformal CVD or ALD barrierlayer over a patterned feature formed in a substrate having an etchstop, etching the barrier layer and the etch stop at the bottom of thepatterned feature, depositing a second barrier layer, and then fillingthe patterned feature with a conductive material, such as copper.

BRIEF DESCRIPTION OF THE DRAWINGS

[0011] So that the manner in which the features of the present inventionare attained and can be understood in detail, a more particulardescription of the invention, briefly summarized above, may be had byreference to the embodiments thereof which are illustrated in theappended drawings.

[0012] It is to be noted, however, that the appended drawings illustrateonly typical embodiments of this invention and are therefore not to beconsidered limiting of its scope, for the invention may admit to otherequally effective embodiments.

[0013]FIG. 1 is a partial cross-sectional view of a substrate havingundercuts at the bottom of its via, as known in the prior art;

[0014]FIGS. 2-8 are partial cross-sectional views of a substrate havingone process sequence of the present invention performed thereon;

[0015]FIG. 9 is a schematic of a multichamber processing apparatus;

[0016]FIG. 10 is a cross-sectional view of a CVD process chamber; and

[0017]FIG. 11 is a cross-sectional view of a PVD process chamber.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

[0018]FIGS. 2-8 illustrate and describe one embodiment of a processsequence of the present invention. FIG. 2 is a partial cross sectionalview of a substrate having a via 200 and a trench 202 formed thereonthrough a dielectric layer 204 to an underlying metal layer 206. Aconformal barrier layer 208, shown in FIG. 3, is formed over thepatterned surface by CVD techniques, such as conventional CVD and rapidCVD, or atomic layer deposition (ALD). The barrier layer deposited byCVD may be formed from materials such as Si_(x)N_(y), TiSi_(x)N, TiN(C),TiNSi(C), Ta, TaC, TaN(C), TaNSi(C), W, WN_(x), SiO_(x)N_(y), SiC, AlN,or Al₂O₃.

[0019] While the barrier layer 208 deposited by CVD or ALD providesdesired conformal coverage of a substrate, including the sidewalls 216and 218 of the via and the trench, respectively (FIG. 4), the barrierlayer 208 also covers the lower portion of the via (FIG. 3), whichcontacts the underlying metal layer 206. The barrier layer 208 on theunderlying metal layer 206 increases the resistance of the overallstructure, and negatively impacts the performance of the structure.Thus, the substrate is exposed to a pre-clean or other etching process,such as an argon/hydrogen etch process to remove a portion of thebarrier layer formed on the horizontal surfaces of the patternedfeature, i.e, the bottom of the via 210 at the interface with theunderlying metal layer 206, the bottom of the trench 212, and the fieldsurface 214, as shown in FIG. 4. The etching may also extend into andremove part of the underlying metal layer (not shown). Preferably, theetching process is performed within a system that also includes thechamber in which the barrier layer 208 is deposited by chemical vapordeposition, so that the substrate is not exposed to air. Morepreferably, the etching process is performed within the same chamber inwhich chemical vapor deposition of the barrier layer is performed.However, in another embodiment, there is an air break in which thesubstrate is moved out of the processing system after the deposition ofthe barrier layer 208 and before the etching process.

[0020] Removing the barrier layer 208 from the bottom of the via 210ensures a good, low resistance electrical contact to the underlyingmetal layer 206. However, removing the barrier layer 208 from anothersurface of the patterned feature, i.e., the bottom of the trench 212,leaves the dielectric layer 204 exposed at the bottom of the trench 212.

[0021] In the present invention, following the etch process, a secondbarrier layer 220, such as Ta, TaN, TiSiN_(x), TaSiN_(x), W, or WN_(x),is sputter deposited using PVD onto the first barrier layer 208 and theexposed dielectric layer at the bottom of the trench 212, as shown inFIG. 5. The PVD barrier layer 220 covers the bottom of the trench 212and the field surface 214. The PVD barrier layer 220 on the bottom ofthe trench 212 covers the dielectric layer at the bottom of the trenchwhich was previously exposed during the etching process to remove thebarrier layer 208 from the bottom of the via 210. The PVD barrier layer220 may also partially or completely cover the vertical surfaces of thepatterned feature, such as the sidewalls 216, 218 of the trench 202 andthe via 200, respectively. However, the deposition of the PVD barrierlayer 220 is minimized at the bottom of the via 210. At this point inthe process, the aspect ratio of the via will typically be in the rangeof about 4 to 1, and the aspect ratio of the trench will typically be inthe range of about 1 to 1. Because of the high aspect ratio/narrowopening of the via 200, few of the atoms or molecules sputtered by PVDwill be sputtered at the appropriate angle to reach the bottom of thevia 210. High density plasma PVD (HDP-PVD) or other directional PVDtechniques may be used to further minimize deposition on the bottom ofthe via.

[0022] In another embodiment, the second barrier layer is deposited, atleast partially, at the bottom of the via (not shown). For example, thebarrier layer may have a thickness of from about 20 Å to about 50 Å atthe bottom of the via. Preferably, the PVD barrier layer covering thebottom of the via has a low resistance. Examples of barrier layers witha low resistance, e.g., less than about 250 μΩ-cm, include PVD Ta, TaN,W, WN_(x), Ti, and TiN layers. Preferably, the second barrier layerdeposited by physical vapor deposition is sufficient to provide abarrier on the bottom of the trench without significantly impairingconduction between the conductive material that is deposited later inthe via and the underlying metal layer.

[0023] A copper seed layer 222 is then deposited on the patternedsubstrate by a PVD, CVD, or electrodes deposition, as shown in FIG. 6. Aseed layer is a layer on which a subsequent metal layer can be depositedby a process such as PVD, CVD, or electroplating. Copper is deposited onthe seed layer by PVD, CVD, or electroplating to fill the trench and viafeatures on the patterned substrate (not shown).

[0024] A similar process sequence may be performed on a patternedsubstrate with an etch stop, such as a nitride etch stop, at the vialevel. FIG. 7 shows the starting material patterned substrate with anetch stop 224 disposed at the bottom of the feature. The steps of apreferred embodiment of this method are illustrated by FIGS. 2, 3, 8,and 5. FIG. 8 shows that the etch stop 224 is removed from the bottom ofthe via 210 during the etching step which removes the barrier layer 208from the bottom of the via 210.

[0025] A schematic of a multichamber processing apparatus 35 suitablefor performing the processes of the present invention is illustrated inFIG. 9. The apparatus is an “ENDURA” system commercially available fromApplied Materials, Santa Clara, Calif. The particular embodiment of theapparatus 35 shown herein is suitable for processing planar substrates,such as semiconductor substrates, and is provided to illustrate theinvention, and should not be used to limit the scope of the invention.The apparatus 35 typically comprises a cluster of interconnected processchambers 36, for example, CVD and PVD deposition and rapid thermalannealing chambers.

[0026] The apparatus comprises a CVD deposition chamber 41 (shown inFIG. 10) which is used to deposit the conformal barrier layer 208 in oneembodiment. The CVD deposition chamber 41 has surrounding sidewalls 45and a ceiling 50. The chamber 41 comprises a process gas distributor 55for delivering process gases into the chamber. Mass flow controllers andair operated valves are used to control the flow of process gases intothe deposition chamber 41. The gas distributor 55 is typically mountedabove the substrate (as shown), or peripherally about the substrate (notshown). A support 65 is provided for supporting the substrate in thedeposition chamber 41. The substrate is introduced into the chamber 41through a substrate loading inlet in the sidewall 45 of the chamber 41and placed on the support 65. The support 65 can be lifted or lowered bysupport lift bellows 70 so that the gap between the substrate and gasdistributor 55 can be adjusted. A lift finger assembly 75 comprisinglift fingers that are inserted through holes in the support 65 can beused to lift and lower the substrate onto the support to facilitatetransport of the substrate into and out of the chamber 41. A thermalheater 80 is then provided in the chamber to rapidly heat the substrate.Rapid heating and cooling of the substrate is preferred to increaseprocessing throughput, and to allow rapid cycling between successiveprocesses operated at different temperatures. The temperature of thesubstrate is generally estimated from the temperature of the support 65.

[0027] The substrate is processed in a process zone 95 above ahorizontal perforated barrier plate 105. The barrier plate 105 hasexhaust holes 110 which are in fluid communication with an exhaustsystem 115 for exhausting spent process gases from the chamber 41. Atypical exhaust system 115 comprises a rotary vane vacuum pump (notshown) capable of achieving a minimum vacuum of about 10 mTorr, andoptionally a scrubber system for scrubbing byproduct gases. The pressurein the chamber 41 is sensed at the side of the substrate and iscontrolled by adjusting a throttle valve in the exhaust system 115.

[0028] A plasma generator 116 is provided for generating a plasma in theprocess zone 95 of the chamber 40 for plasma enhanced chemical vapordeposition processes. The plasma generator 116 can generate a plasma (i)inductively by applying an RF current to an inductor coil encircling thedeposition chamber (not shown), (ii) capacitively by applying an RFcurrent to process electrodes in the chamber, or (iii) both inductivelyand capacitively while the chamber wall or other electrode is grounded.A DC or RF current at a power level of from about 750 Watts to about2000 Watts can be applied to an inductor coil (not shown) to inductivelycouple energy into the deposition chamber to generate a plasma in theprocess zone 95. When an RF current is used, the frequency of the RFcurrent is typically from about 400 KHz to about 16 MHZ, and moretypically about 13.56 MHZ Optionally, a gas containment or plasma focusring (not shown), typically made of aluminum oxide or quartz, can beused to contain the flow of process gas or plasma around the substrate.

[0029] In another embodiment, a conformal barrier layer 208 is formedover the patterned surface by atomic layer deposition (ALD). The ALDbarrier layer may be formed from materials such as Ta, TaN, W, or WN.Examples of ALD processes are described in commonly assigned U.S. patentapplication Ser. No. 09/754,230, entitled “Method of Forming RefractoryMetal Nitride Layers Using Chemisorption Techniques,” filed on Jan. 3,2001, U.S. patent application Ser. No. 09/960,469, entitled “Formationof Refractory Metal Nitrides Using Chemisorption Techniques,” filed onSep. 19, 2001, and U.S. patent application Ser. No. 09/965,370, entitled“Integration of Barrier Layer and Seed Layer,” filed on Sep. 26, 2001,which are hereby incorporated by reference.

[0030] Generally, ALD can be used to deposit monolayers of materials,such as monolayers of a nitrogen-based compound and a metal containingcompound, which are alternately chemisorbed on a substrate. For example,a monolayer of a nitrogen-based compound is chemisorbed on a substrateby introducing a pulse of a nitrogen-based gas into a processingchamber. After the monolayer is chemisorbed onto the substrate, excessnitrogen-based compound is removed from the processing chamber byintroducing a pulse of purge gas thereto. Purge gases, such as, forexample, helium (He), argon (Ar), nitrogen (N₂), and hydrogen (H₂), andother gases, may be used. After the pulse of purge gas, a pulse of ametal containing compound is introduced into the processing chamber tochemisorb a monolayer of metal containing compound on the substrate. Themetal containing compound may be provided as a gas or may be providedwith the aid of a carrier gas. Examples of carrier gases which may beused include, but are not limited to, helium (He), argon (Ar), nitrogen(N₂), and hydrogen (H₂).

[0031] In another embodiment of ALD, instead of using pulses of a purgegas between the pulses of a nitrogen-based compound and a metalcontaining compound, the purge gas is continuously flowed, i.e., bothduring the pulses of a nitrogen-based compound and the pulses of a metalcontaining compound, and in between these pulses.

[0032] One exemplary process of depositing a tantalum nitride barrierlayer by atomic layer deposition in a processing chamber comprisessequentially providing pentadimethylamino-tantalum (PDMAT) at a flowrate between about 100 sccm and about 1000 sccm, and preferably betweenabout 200 sccm (standard cubic centimeters per minute) and 500 sccm, fora time period of about 1.0 second or less, providing ammonia at a flowrate between about 100 sccm and about 1000 sccm, preferably betweenabout 200 sccm and 500 sccm, for a time period of about 1.0 second orless, and a purge gas at a flow rate between about 100 sccm and about1000 sccm, preferably between about 200 sccm and 500 sccm for a timeperiod of about 1.0 second or less. The heater temperature preferably ismaintained between about 100° C. and about 300° C. at a chamber pressurebetween about 1.0 and about 5.0 torr. This process provides a tantalumnitride layer in a thickness between about 0.5 A and about 1.0 A percycle. The alternating sequence may be repeated until a desiredthickness is achieved.

[0033] A pre-clean chamber which can be used to remove the barrier layer208 from the bottom of the via 210 is the Pre-Clean II chamber availablefrom Applied Materials, Inc. of Santa Clara, Calif. Additionally, otheretch chambers known in the field could be used to remove the barrierlayer as described. In a preferred embodiment, the CVD chamber 41 ofFIG. 16 can be used to etch the CVD barrier layer deposited on thesubstrate. The support pedestal 82 may be used to bias the substrate. Aplasma generator 116, as described above, is attached to the supportpedestal 82. Argon is the principal etching gas. It ionizes in thechamber, and its positively charged ions are attracted to the negativelybiased substrate with enough energy that the barrier layer 208 isremoved from the horizontal surfaces of the patterned feature.

[0034] In another embodiment, the barrier layer 208 may be deposited andthen removed from the bottom of the via 210 in an ALD chamber withplasma capability.

[0035] A conventional PVD deposition chamber commercially available fromApplied Materials, Santa Clara, Calif. can be used to deposit a secondbarrier layer 220 on a substrate. FIG. 11 shows a simplified example ofa PVD chamber 300. The PVD chamber 300 generally includes a chambersection 306. The chamber section 306 generally includes a substratesupport member 302 for supporting a substrate (not shown) to beprocessed, a target 304 for providing a material to be deposited on thesubstrate and a process environment 303 wherein a plasma is created forions to sputter the target 304.

[0036] The PVD chamber 300 generally includes the substrate supportmember 302, also known as a susceptor or heater, disposed within thechamber section 306. The substrate support member 302 may heat thesubstrate if required by the process being performed. A target 304 isdisposed in the top of the chamber section 306 to provide material, suchas aluminum, titanium or tungsten, to be sputtered onto the substrateduring processing by the PVD chamber 300. A lift mechanism, including aguide rod 326, a bellows 328 and a lift actuator 330 mounted to thebottom of the chamber section 306, raises the substrate support member302 to the target 304 for the PVD chamber 300 to perform the process andlowers the substrate support member 302 to exchange substrates. A set ofshields 332, 334, 336, disposed within the chamber section 306, surroundthe substrate support member 302 and the substrate during processing inorder to prevent the target material from depositing on the edge of thesubstrate and on other surfaces inside the chamber section 306.

[0037] Situated above the chamber section 306 and sealed from theprocessing region of the chamber is a cooling chamber 316. The coolingchamber 316 is generally defined by the target 304, a top 317 and sides319. A cooling fluid, such as water or antifreeze, flows into thecooling chamber 316 through inlet 318 and out of the cooling chamber 316through outlet 320.

[0038] A rotating magnetron 308 is disposed in the cooling chamber 316on the non-process environment side of the target 304 and surrounded bythe cooling fluid. The magnetron 308 is isolated from the vacuum in thechamber section 306 by seals (not shown) between the magnetron chamberand target and between the target and processing region. The magnetron308 has a set of magnets 310 arranged within the magnetron 308 so thatthey create magnetic field lines spinning across the sputtering surfaceof the target. Electrons are captured along these lines, where theycollide with gas atoms, creating ions. To create this effect about thecircumference of the target, the target is rotated during processing.The magnetron 308 is situated above the top side of the target 304 withabout a one millimeter gap therebetween, so the magnetic fields from themagnets 310 may penetrate through the target 304. A motor assembly 312for rotating the magnetron 308 is mounted to the top 317 of the coolingchamber 316. A shaft 314, which mechanically couples the motor assembly312 to the rotational center of the magnetron 308, extends through thetop 317. The motor assembly 312 imparts a rotational motion to themagnetron 308 to cause it to spin during performance of the substrateprocess.

[0039] A negative DC bias voltage of about 200 V or more is typicallyapplied to the target 304, and a ground is applied to an anode, thesubstrate support member 302, and the chamber surfaces. The combinedaction of the dc bias and the rotating magnetron 308 generate an ionizedplasma discharge in a process gas, such as argon, between the target 304and the substrate. The positively charged ions are attracted to thetarget 304 and strike the target 304 with sufficient energy to dislodgeatoms of the target material, which sputters onto the substrate.

[0040] The process can be implemented using a computer program productthat runs on a conventional computer system comprising a centralprocessor unit (CPU) interconnected to a memory system with peripheralcontrol components, such as for example a 68400 microprocessor,commercially available from Synenergy Microsystems, California.

EXAMPLE 1

[0041] In one example, a process according to the present invention wasperformed on a substrate having a 0.25 μm via with about a 4:1 aspectratio and a trench. The patterned substrate was first introduced into aCVD chamber, such as a TxZ® chamber, commercially available from AppliedMaterials, Inc., Santa Clara, Calif., where about 50 Å to about 100 Å ofSi_(x)N_(y) was deposited on the substrate using CVD techniques. Thesubstrate was then moved into a Pre-clean II chamber (available fromApplied Materials, Inc., located in Santa Clara, Calif.), where thesubstrate was subjected to an argon/hydrogen etching environment forabout 20 seconds. RF/DC powers of about 300/300W were used. Next, thesubstrate was moved into a PVD chamber where about 400 Å of TaN wasdeposited on the substrate in the field. Next, the substrate wasintroduced into a CVD chamber where about 400 Å of CVD Cu was depositedon the substrate as a wetting layer. Then, Cu was sputtered onto thesubstrate to complete the fill the via and the trench.

Example 2

[0042] In another example, a patterned substrate with a dual damascenetrench structure and a via opened to an underlying Cu wiring was firstintroduced into a multichamber processing apparatus having a sputterclean chamber, a CVD barrier chamber, a PVD barrier chamber, and a PVDCu chamber. 50 Å of TiSi_(x)N was deposited on the substrate in a CVDbarrier chamber at a pressure of less than 10 Torr and at a temperatureof about 300° C. to about 380° C. by reacting TDMAT in a N₂/H₂environment to form a plasma. The substrate was then treated with a SiH₄soak. The deposited TiSi_(x)N conformally covered both the via andtrench structure. In the next step, the substrate was moved to thesputter clean chamber, and subjected to argon/hydrogen etch to etch offthe TiSi_(x)N film deposited at the bottom of the via. The etching wascontinued past the bottom of the via into the underlying Cu wiring toremove about 5 to 10 Å of the underlying Cu wiring. The etch processalso removed the TiSi_(x)N film at the bottom of the trench structure.Next, the substrate was moved into a PVD Ta/TaN chamber to receive aTa/TaN film having a thickness at the bottom of the trench structure ofabout 30 Å. Then, the substrate was transferred into a PVD Cu chamberwhere about 1500 Å of Cu was deposited on the substrate with minimaldeposition at the bottom of the via.

[0043] While the foregoing is directed to the preferred embodiment ofthe present invention, other and further embodiments of the inventionmay be devised without departing from the basic scope thereof, and thescope thereof is determined by the claims which follow.

What is claimed is:
 1. A method of filling one or more of a via and atrench in a patterned substrate, comprising: a) depositing a generallyconformal first barrier layer on the patterned substrate by atomic layerdeposition; b) removing the first barrier layer from the horizontalsurfaces of the patterned substrate; c) depositing a second barrierlayer by physical vapor deposition, wherein the second barrier layer isselected from the group consisting of TiSiN_(x) and TaSiN_(x); and thend) depositing one or more conductive materials.
 2. The method of claim 1wherein the depositing one or more conductive materials comprisesdepositing a seed layer and a metal layer in the via and/or trench afterthe second barrier layer is deposited.
 3. The method of claim 2 whereinthe seed layer and the metal layer are copper.
 4. A method of fillingone or more of a via and a trench in a patterned substrate, comprising:a) depositing a generally conformal first barrier layer on the patternedsubstrate by atomic layer deposition; b) removing the first barrierlayer from the horizontal surfaces of the patterned substrate; c)depositing a second barrier layer by physical vapor deposition; and thend) depositing one or more conductive materials, wherein the firstbarrier layer is deposited and removed from the horizontal surfaces ofthe patterned substrate within a single chamber of an integratedprocessing tool.
 5. The method of claim 4 wherein the chamber is anatomic layer deposition chamber and the first barrier layer is depositedand etched in the chamber.
 6. A method of filling one or more of a viaand a trench in a patterned substrate, comprising: a) depositing agenerally conformal first barrier layer on the patterned substrate byatomic layer deposition; b) removing the first barrier layer from thehorizontal surfaces of the patterned substrate; c) depositing a secondbarrier layer by physical vapor deposition; and then d) depositing oneor more conductive materials, wherein depositing the conductive materialcomprises depositing a seed layer and a metal layer in the via and/orthe trench after the second barrier layer is deposited, and wherein theseed layer is deposited by chemical vapor deposition or electrodesdeposition.
 7. A method of filling one or more of a via and a trench ina patterned substrate, comprising: a) depositing a generally conformalfirst barrier layer on the patterned substrate by atomic layerdeposition; b) removing the first barrier layer from the horizontalsurfaces of the patterned substrate; c) depositing a second barrierlayer by physical vapor deposition; and then d) depositing one or moreconductive materials, wherein depositing the conductive materialcomprises depositing a seed layer and a metal layer in the via and/orthe trench after the second barrier layer is deposited, and wherein themetal layer is deposited by chemical vapor deposition or physical vapordeposition.
 8. A method of filling one or more of a via and a trench ina patterned substrate, comprising: a) depositing a generally conformalfirst barrier layer on the patterned substrate by atomic layerdeposition; b) removing the first barrier layer from the horizontalsurfaces of the patterned substrate; c) depositing a second barrierlayer by physical vapor deposition; and then d) depositing one or moreconductive materials, wherein the via has an aspect ratio of about 4 to1 and the trench has an aspect ratio of from about 1 to about
 1. 9. Amethod of filling one or more of a via and a trench in a patternedsubstrate, comprising: a) depositing a generally conformal first barrierlayer on the patterned substrate by atomic layer deposition; b) removingthe first barrier layer from the horizontal surfaces of the patternedsubstrate; c) depositing a second barrier layer by physical vapordeposition; and then d) depositing one or more conductive materials,wherein the second barrier layer has a thickness of from about 20 Å toabout 50 Å at the bottom of the via.
 10. A method of filling one or moreof a via and a trench in a patterned substrate, comprising: a)depositing a generally conformal first barrier layer on the patternedsubstrate by atomic layer deposition; b) removing the first barrierlayer from the horizontal surfaces of the patterned substrate; c)depositing a second barrier layer by physical vapor deposition; and thend) depositing one or more conductive materials, wherein the secondbarrier layer is selected from the group consisting of Ta, TaN, W,WN_(x), Ti, and TiN, and the second barrier layer has a thickness offrom about 20 Å to about 50 Å at the bottom of the via.